Bsim3v3.1 manual

Developers: BSIM Developers: • Professor Chenming Hu (project director), UC Berkeley • Professor Ali M. Niknejad(project director), UC Berkeley • Dr. Xuemei (Jane) Xi, UC Berkeley • Dr. Jin He, UC Berkeley • Mr. Mohan Dunga, UC Berkeley Developers of BSIM4 Previous Versions: • Dr. Weidong Liu, Synopsys • Dr. Xiaodong Jin, Marvell • Dr. Kanyu (Mark) Cao, UC Berkeley.  · I'm currently designing a schematic of a two-stage cmos opamp using TSMC process file and BSIM3 (V) model as my library in Star-Hspice simulator. Using the formula for Id (sat) and the parameters (Vt0, tox, Uo) from my model, I was able to compute W/L to achieve the 80dB open loop gain. But during ac simulation the result is dB. BSIM3v is based on its predecessor, BSIM3v, with the following changes: * A bias-dependent Vfb is kept in the capacitance models, capMod=l and 2. * A version number checking is added; a warning message will be given if user-specified version number is different from its .

additions over BSIM3v3: (1) an accurate new model of the intrinsic input resistance for both RF, high-frequency analog and high-speed digital applications; (2) flexible substrate resistance network for RF modeling; (3) a new accurate. Gate Dielectric Model As the gate oxide thickness is vigorously scaled down, the finite charge-layer thickness can not be ignored [1]. BSIM4 models this effect in both IV and CV. For this purpose, BSM4 accepts two of the following three as the model inputs: the electrical gate oxide thickness TOXE1, the physical gate oxide thickness TOXP. BSIMSOI Developers: n Dr. Pin Su n Mr. Hui Wan n Dr. Samuel Fung n Prof. Mansun Chan n Prof. Ali Niknejad n Prof. Chenming Hu Previous BSIMSOI/BSIMPD Developers: n Dr. Samuel Fung.

additions over BSIM3v3: (1) an accurate new model of the intrinsic input resistance for both RF, high-frequency analog and high-speed digital applications; (2) flexible substrate resistance network for RF modeling; (3) a new accurate. BSIM3v3 is the latest industry-standard MOSFET model for deep-submicron digital and analog circuit designs from the BSIM Group at the University of California at Berkeley. BSIM3v is based on its predecessor, BSIM3v Its many improvements and enhancements include. * A new intrinsic capacitance model (the Charge Thickness Model. The manual will introduce BSIM3v3’s capabilities in the following manner: • Chapter 2 will highlight the physical basis and arguments used in deriving BSIM3v3’s I-V equations.